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Experimental measurements of structure factors in GaAs have been compared with the results of ab initio calculations by the pseudopotential method. We measure the charge in the bond from charge-density maps to be 0.071 electron, in good agreement with theory. The measurements were obtained by an electron-diffraction technique which can be applied to submicron crystals, thus greatly extending the range of materials for which structure factors can be measured, and theoretical calculations tested.
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Zuo et al. (1988) studied this question.
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