In/sub 0.425/Al/sub 0.575/As-In/sub x/Ga/sub 1-x/As metamorphic high electron mobility transistors (MHEMTs) with two different channel designs, grown by molecular beam epitaxy (MBE) system, have been successfully investigated. Comprehensive dc and high-frequency characteristics, including the extrinsic transconductance, current driving capability, device linearity, pinch-off property, gate-voltage swing, breakdown performance, unity-gain cutoff frequency, max. oscillation frequency, output power, and power gain, etc., have been characterized and compared. In addition, complete parametric information of the small-signal device model has also been extracted and discussed for the pseudomorphic channel MHEMT (PC-MHEMT) and the V-shaped symmetrically graded channel MHEMT (SGC-MHEMT), respectively.
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Hsu et al. (2005) studied this question.
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