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December 1, 1991IEEE Electron Device Letters

Measurement of threshold voltages of thin-film accumulation-mode PMOS/SOI transistors

A. Terao Denis Flandre E. Lora‐Tamayo F. Van de Wiele

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Abstract

Accumulation-mode PMOS transistors on SOI (silicon on insulator) are characterized by several conduction mechanisms. Measurements of the threshold voltage corresponding to each of them are presented for the first time. An intuitive physical interpretation of their dependence on the front- and back-gate voltages is also given.>

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Cite This Study

Terao et al. (1991) studied this question.

synapsesocial.com/papers/6a916866963a1f481f33f7ff https://doi.org/10.1109/55.116954

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