Glow-discharge optical spectroscopy (GDOS) was used as a technique for obtaining impurity-concentration profiles of annealed and unannealed GaAs implanted with Ge, B, and Mg. Calibration to obtain the absolute concentration was accomplished by comparison to pure elemental standards. For implantation fluences of 1×1015/cm2 and energies of 60 and 120 keV, the range and magnitude are compared with the theoretical predictions of LSS. Large surface pileup and out diffusion have been observed for Mg implants annealed at temperatures between 700 and 900 °C. As-implanted Mg samples exhibited different profiles for pyrolytic and plasma Si3N4 encapsulation due to differences in deposition temperatures.
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Williamson et al. (1979) studied this question.
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