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We show that a novel material InNAsP grown on InP is superior for long-wavelength microdisk lasers (and so expected for edge-emitting lasers) because of its larger conduction band offset from the addition of a small amount of nitrogen (0.5%-1%). The maximum temperature of operation for an InNAsP-GaInAsP microdisk laser is 70/spl deg/C, which is about 120/spl deg/C higher than that of a similar laser fabricated from GaInAs-GaInAsP. The characteristic temperature T/sub 0/ of the former is 97 K, also higher than that of the latter.
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Tu et al. (1998) studied this question.
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