706‐GHz GaAs CW fundamental‐mode TUNNETT diodes fabricated with molecular layer epitaxy

GaAs TUNNET diodes with 75‐nm thick undoped transit‐time layer and 14‐nm thick n + electric‐field‐inducing layer, fabricated with molecular layer epitaxy, were oscillating in fundamental‐mode, metal, rectangular WR‐1.0 (0.254 × 0.127 mm) resonant cavities at 706 GHz. The continuous wave output power was ‐67 dBm, at the bias current of 600 mA. The frequency range of continuous wave fundamental‐mode TUNNETT diodes fabricated with molecular layer epitaxy extends from 60 GHz (+13 dBm) to 706 GHz. Modulation experiments of lower frequency, 86‐GHz and 163‐GHz, TUNNETTs have shown that TUNNETTs are suitable for broadband communication and other systems at the modulation rate exceeding 2 Gbps. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)