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GaAs TUNNET diodes fabricated with molecular layer epitaxy oscillated in metal rectangular resonant WR-2.2 cavities in fundamental mode are reported. Continuous-wave frequency was tuned in the range 290–393 GHz with bias current from 320 to 460 mA. Output power was −42 dBm at 393 GHz.
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Nishizawa et al. (2005) studied this question.
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