Carrier injection and trapping phenomena in metal-polymer-silicon structures

Hysteresis phenomena have been observed in capacitance-voltage measurements on metal-polymer-silicon structures, which demonstrate the injection of holes and electrons from silicon and metal electrodes. The dependence of the width of the hysteresis cycle on the sweep-frequency voltage shows that holes or electrons dominate the statistics of charge distribution in polymer traps depending on the sweep rate. dc conduction measurements on these samples showed a linear relation between the logarithm of current and the square root of the voltage. The symmetry of these characteristics indicate a bulk-limited conduction mechanism of carrier emission from polymer traps.