On the Interaction of a Screw Dislocation with Interfaces during Thin Films Growth

A solution of the problem of the interaction of a screw dislocation with interfaces in the substrate-transition layer-epitaxial thin film structure is obtained. The possible arrays of dislocation accumulation are considered. A change in the stress of the screw dislocation interaction with the substrate-thin film interface (without a transition layer) due to the interface incoherence is estimated. A method for reducing the misfit dislocation effect on the thin film structure and its properties is proposed. Numerical calculations are made for the systems Ge-Si and Si-Ge. A change in the dislocation line shape close to a surface roughness is considered.