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A new target structure for a television camera tube consisting of an array of capacitors and p-n junctions, formed by a deposited epitaxial layer, is described. The epitaxial growth forms a series of pyramidal shaped structures on top of the patterned oxidized wafer. These silicon structures form an array of capacitors with the substrate and cover much of the oxide layer. They are separated by micron-size gaps and project several microns above the oxide surface. Contact to the substrate is made through an array of apertures where p-n junctions are formed. By intercepting the electron beam, these structures obviate the need for a resistive sea and are expected to minimize material compatibility and thermal processing problems.
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Engeler et al. (1970) studied this question.
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