Contactless Measurement of Silicon Resistivity in Cylindrical TE01n Mode Cavities

This paper presents a new contactless method of resistivity measurement of semiconductor plates which is being applied in the production practice with the use of microwave cylindrical TE01n nmode resonators The errors of resistivity measurement have been shown in the example of silicon plates and the TE013 mode cavity working in the X band. It has been shown that for the plates of thickness 100-1200 μm and diameters larger than 60 percent of the diameter of the cavity, silicon resistivity can be measured in the range of 10-6-102 μ×m, accurate to several percent. Experimental verification of the present method has been made by comparison of the results of silicon resistivity measured by the conventional four-point probe method.