Answers are grounded in this paper and cite their sources.
A new algorithm is described for deriving the density of states N(E) from the Fermi energy EF upwards toward the conduction band edge. This refinement in the analysis of space-charge-limited currents (SCLC) enables the accurate determination of N(E) by implicitly accounting for the spatial variations of physical quantities across the thickness of the diode. SCLC is measured in NiCr/n+/a-Si1−xGex:H/Pt diode structures. For a-Si:H samples, SCLC values for N(EF) are compared to those derived from admittance measurements on the same diodes. The two determinations agree in samples where 1016
No takes yet. Share an insight, caveat, or question.
Richard L. Weisfield (1983) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: