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A new, practical metrological method for atomic force microscopy (AFM) is proposed to determine the dimensions of Si nano-structures. In this method, the AFM image profile is expressed as a modeling equation which includes the critical dimensions of the sample and the tip. The dimensions are obtained from part of the measured AFM image as fitting parameters of the equation. It is demonstrated that the critical dimensions of the sample and the tip obtained by this method agree well with those measured by scanning electron microscopy in the nanometer range.
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Nagase et al. (1995) studied this question.
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