Electrical Conduction in n-Type InSb between 2 k and 300 k

Using a digital recording technique the electrical conductivity and Hall coefficient have been measured between 2°k and 300°k for samples of InSb containing from 10 18 down to 5 X 10 13 conduction electrons cm -3 . The behaviour of the Hall mobility has been accounted for by a combination of acoustic lattice and ionized impurity scattering and the concentration of scattering centres estimated. The intrinsic carrier concentration has been calculated from the results obtained above 180°k while the results below 20°k show no evidence of a donor activation energy even in the purest material. At 4°k deviations from ohmic behaviour were observed for fields above 0.1 v cm -1 .