The effects of carbon atoms on defect formation in annealings were studied. The results suggest that a defect associated with the photoluminescence line at 0.767 eV (P-line) captures the carbon atom preferentially in the formation process. By assuming that the defect is Ci-O2(Ci: interstitial carbon atom, O: oxygen atom), the experimental results on the 0.767 eV line can be explained. It is reported that the new donor formation is suppressed in a sample that does not contain carbon atoms, but the obtained value for the new donor concentration is 2 × 1015/cm3in carbon-lean Czochralski-grown sample (carbon concentration <1015/cm3).
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Fukuoka et al. (1990) studied this question.
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