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The formation process of thermal donors in Czochralski-grown silicon crystals at 471.3 °C is studied by means of the optical absorption at a low temperature. The development of six kinds of thermal donors, termed TD-1 through TD-6, is followed separately. Experimental results obtained are analyzed with the modified Kaiser et al. method. The numbers of oxygen atoms involved in TD-3, TD-4, TD-6, and TD-6 are determined to be 6, 6, 7, and 8, respectively, and those involved in TD-1 and TD-2 are suggested to be 3 and 4, respectively.
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Suezawa et al. (1984) studied this question.
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