A new kinetic model is proposed to explain the resistivity shift phenomenon at annealing temperatures of around 550–800 °C. In this model, thermal donor generation and acceptor annihilation both contribute to the resistivity shift, but the latter contributes most. The rodlike defect which can only grow at temperatures below 800 °C is speculated to act as a gettering center for the acceptors. This model is used to explain the most salient features of ‘‘new donor’’ activity.
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C. Y. Kung (1987) studied this question.
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