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The demonstration of the first visible resonant cavity light-emitting diodes (RCLEDs) is reported. The devices consist of an InAlGaP strained quantum well active region surrounded by AlAs/AlGaAs distributed Bragg reflectors. Linewidths from 0.9 nm (2.6 meV) to 45 nm (12.8 meV) were obtained by varying the cavity quality factor (Q).
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Lott et al. (1993) studied this question.
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