We report the first femtosecond measurements of carrier-induced changes in the absorption and refractive index of GaAs thin films. Absorption measurements in the vicinity of the band edge indicate instantaneous band-gap renormalization as well as instantaneous plasma screening of electron-hole interactions. Band filling and plasma screening appear to be the dominant contributions to the changes of refractive index.
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Gong et al. (1990) studied this question.
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