Numerical modelling and simulation of non-uniformly doped channel 6H-silicon carbide MOSFET

An improved model for the non-uniformly doped channel 6H-SiC MOSFET incorporating the incomplete ionization of the dopant impurities using the Fermi–Dirac statistics is developed. The charge-sheet approach is used to evaluate the surface potential, quasi-fermi level, drain current and transconductance for all regions of operation, i.e. subthreshold, linear and saturation. Results so obtained are matched well with the simulated data for two different doping profiles. The improved model will be suitable for CAD (computer aided design) applications to predict the behaviour of the 6H-SiC MOSFET prior to actual device fabrication.