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In this work we present the results of a residual strain analysis performed on LOCOS processed films by means of x-ray reciprocal space mapping. Our findings demonstrate the possibility of achieving a sub-micrometre spatial resolution by using an x-ray waveguide as an innovative optical element in the measurement configuration. The entire set-up, working as a projection microscope, can be schematically described as waveguide, sample and CCD camera. In order to derive a quantitative description of the strain field induced in the Si wafer by the 1 µm wide SiO 2 stripes, we performed data analysis by dynamical simulation of the x-ray diffraction profiles based on an analytical treatment of the elastic field.
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Giannini et al. (2001) studied this question.
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