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The fabrication of an airbridged low parasitic resonant tunnelling diode is described. The devices were fabricated from strained In0.1Ga0.9As/GaAs/AlAs layers. They yielded excellent DC characteristics with simultaneously high peak-to-valley current ratios of 7:1 and peak current of 50kA/cm2 at 300K. RF measurements up to 40GHz showed that the total parasitic capacitance was 0.013 pF.
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Lheurette et al. (1992) studied this question.
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