Effect of Reducing Process Temperature for Preparing SrBi2Ta2O9 in a Metal/Ferroelectric/Semiconductor Structure

A SrBi2Ta2O9 (SBT) thin film was prepared on a CeO2/Si(100) substrate at a process temperature of 700° C. In the X-ray photoelectron spectroscopy (XPS) analysis, no diffusion of Si, which had been observed in the 800° C process sample, was detected in this 700° C process sample. In the capacitance-voltage (C-V) measurement, the width of the threshold hysteresis (“memory window”) was observed to be 1.0 V. In the curve fitting of the C-V characteristics, the measured characteristics fit the calculated characteristics fairly well. It is considered that this fairly good fit is due to prevention of the diffusion of Si and SBT elements caused by reducing the process temperature for preparing the SBT thin film.