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The epitaxial growth of a Lennard-Jones system is studied as a function of substrate temperature Tₛ and deposition rate. For all substrate temperatures the growth is into well-ordered layers. Layers become fully completed at intermediate Tₛ. At very low Tₛ the layers contain defects and voids; however, the atoms are still arranged in close-packed islands within the layers.
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Schneider et al. (1985) studied this question.
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