Dynamic switching characteristics of pseudo-spin valve memory elements

This paper presents the dynamic switching behavior of pseudo-spin valve memory elements by micromagnetic modeling. The fast rise time of the wordline current pulse dramatically reduces the write threshold and triggers the coherent rotation switching process for the memory element with parallel magnetization remanent state. The reduction of write threshold becomes pronounced when the layer thickness differential decreases. The insufficient duration of wordline current pulse results in the incomplete magnetization reversal, which may increase the instability of the memory elements.