The breakdown voltage of planar Schottky diodes

The breakdown-voltage-limiting edge effects of Schottky diodes are analysed, with special emphasis on the planar Schottky-diode structure. The numerical two-dimensional calculation of the field distribution in this structure shows that the breakdown voltage can be increased by appropriate design ; the breakdown voltage cannot, however, reach its bulk value because it is limited by and dependent on the shape of the oxide cut resulting from the photolithographic processes. Computer-calculated normalized plots are given which can be used in the design of planar Schottky diodes.