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Ge 1-x Sn x is receiving a growing interest in the semiconductor community as the material properties are interesting for both electrical and optical device applications. In this contribution we discuss the potential of Ge 1-x Sn x for future electrical device applications. Further, we will briefly review its fabrication by means of Chemical Vapor Deposition and discuss the structural material properties and its stability against thermal treatments.
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Loo et al. (2012) studied this question.
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