The first transistor action of tunnelling hot electron transistors with single-crystalline metal (CoSi2)/insulator (CaF2) has been achieved. This device consists of CoSi2/CaF2 heterojunctions grown on n-Si(111) substrate by ionised beam epitaxy for CaF2 and a two step growth technique for CoSi2. Transfer efficiency was more than 0.9 for hot electrons through 1.9nm-thick CoSi2 metal base layer at 77 K.
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Muratake et al. (1992) studied this question.
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