A new surface reaction model has been presented to simulate topological evolutions by taking into account the existence of adsorbed radicals on the substrate surface. The model treats the etching rate as a function of the coverage ratio by adsorbed radicals on the surface. Based on the model, a two-dimensional topography simulator has been developed. The simulator is applied to silicon-dioxide trench etchings made by hydrofluorocarbon gases. First, micro-loading effects in an important ion-assisted etching process are studied. It is confirmed that the micro-loading effect is due to the shortage of supplied active radicals inside the trench structure. Secondly, the competitive process between etching and deposition is examined. The side-wall protection phenomena resulting from the process are well simulated.
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Misaka et al. (1992) studied this question.
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