What question did this study set out to answer?

To examine how ammonium sulfide surface passivation alters the Schottky barrier height and interface trap density of gallium arsenide contacts formed with various metals.

November 1, 1988Japanese Journal of Applied PhysicsOpen Access

Metal-Dependent Schottky Barrier Height with the (NH4)2Sx-Treated GaAs

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Authors

JFJia-Fa FanUniversity of Tsukuba HOHaruhiro OigawaUniversity of Tsukuba YNYasuo NannichiUniversity of Tsukuba

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Implication

Experimental investigation demonstrates metal-dependent Schottky barrier heights on sulfide-treated gallium arsenide, indicating a significant reduction in interface trap density.

Key Points

To examine how ammonium sulfide surface passivation alters the Schottky barrier height and interface trap density of gallium arsenide contacts formed with various metals.
Fabricated Schottky barriers on gallium arsenide (GaAs) substrates treated with ammonium sulfide ((NH4)2Sx) using different metals.
Evaluated barrier height variations across contact metals and quantified interface trap densities relative to untreated GaAs controls.
Schottky barrier heights exhibited pronounced sensitivity to the choice of metal on (NH4)2Sx-treated GaAs.
Interface trap density dropped from 6.5×10^13 cm^-2·eV^-1 on untreated surfaces to 9.8×10^12 cm^-2·eV^-1 following (NH4)2Sx passivation.

Cite This Study

Fan et al. (1988) studied this question.

synapsesocial.com/papers/6a929ffede5a63b802a29bf3 https://doi.org/10.1143/jjap.27.l2125

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Implication

Experimental investigation demonstrates metal-dependent Schottky barrier heights on sulfide-treated gallium arsenide, indicating a significant reduction in interface trap density.

Metal-Dependent Schottky Barrier Height with the (NH4)2Sx-Treated GaAs

Discussion

Member takes

Implication

Key Points

Cite This Study

Metal-Dependent Schottky Barrier Height with the (NH4)2Sx-Treated GaAs

Discussion

Member takes

Implication

Key Points

Cite This Study

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