What question did this study set out to answer?

Investigate the effect of ammonium polysulfide treatment on the surface and interface states of gallium arsenide metal-insulator-semiconductor structures.

December 1, 1989Japanese Journal of Applied PhysicsOpen Access

Marked Reduction of the Surface/Interface States of GaAs by (NH4)2Sx Treatment

View Full Paper

Ask AI

Bookmark

Authors

JFJia-Fa FanUniversity of Tsukuba YKY. KurataHitachi (Japan)YNYasuo NannichiUniversity of Tsukuba

Discussion

Member takes

Implication

Experimental study demonstrates a marked reduction in interface state density on GaAs treated with ammonium sulfide, indicating effective surface passivation for semiconductor devices.

Key Points

Investigate the effect of ammonium polysulfide treatment on the surface and interface states of gallium arsenide metal-insulator-semiconductor structures.
Treated gallium arsenide (GaAs) surfaces with an ammonium polysulfide ((NH4)2Sx) solution.
Fabricated metal-insulator-semiconductor (MIS) capacitors by depositing a SiOx insulator using conventional resistive-heating evaporation.
Achieved an MIS interface state density of approximately 1.2×10¹¹ cm⁻²·eV⁻¹ across a broad range of the GaAs band gap.
Reduced the interface state density by two orders of magnitude compared to as-etched GaAs.

Cite This Study

Fan et al. (1989) studied this question.

synapsesocial.com/papers/6a9de8e84c53cd4efa42bbd0 https://doi.org/10.1143/jjap.28.l2255

View Full Paper

Ask AI

Bookmark

Implication

Experimental study demonstrates a marked reduction in interface state density on GaAs treated with ammonium sulfide, indicating effective surface passivation for semiconductor devices.

Marked Reduction of the Surface/Interface States of GaAs by (NH4)2Sx Treatment

Discussion

Member takes

Implication

Key Points

Cite This Study

Marked Reduction of the Surface/Interface States of GaAs by (NH4)2Sx Treatment

Discussion

Member takes

Implication

Key Points

Cite This Study

Also Consider

Also Consider