We report the first measurement of room temperature carrier lifetimes at a magnetic metal--semiconductor interface, Fe/GaAs(001)-(2×4). The lifetimes are significantly enhanced relative to uncoated or sulfur-passivated surfaces, or the Al/GaAs(001)-(2×4) interface. These enhanced lifetimes correlate with a corresponding decrease in the density of midgap states which otherwise dominate the character of the GaAs(001) surface. The epitaxial Fe film provides both a ferromagnetic contact and a superior surface-passivating layer which does not pin the Fermi energy.
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Jonker et al. (1997) studied this question.
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