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Bulk traps in very thin ( approximately 100-nm) SIMOX films have been studied by applying current deep-level transient spectroscopy (DLTS) to fully depleted, enhancement MOS transistors, fabricated in these films. The effect of states at both the front and back SiO/sub 2/-Si interfaces is eliminated by suitable biasing. Using this technique, a bulk trap with energy level 0.44 eV above the valence-band edge, capture cross section approximately 10/sup -17/ cm/sup 2/, and concentration approximately 10/sup 15/ cm/sup -3/, which is believed to be due to iron contamination, has been identified.>
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McLarty et al. (1988) studied this question.
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