The continuing search for a good cryogenic transistor has led to a new proposal, the superconducting-base semiconductor-isolated transistor (SUB-SIT). This three-terminal device is expected to have characteristics very similar to those of bipolar transistors, but at millivolt operating levels. We present discussions of the concepts involved in the SUBSIT, proposed fabrication techniques, and theoretical results for its DC and high frequency characteristics.
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Frank et al. (1985) studied this question.
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