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We report the fabrication and performance characteristics of InGaAsP double-channel planar buried heterostructure (DCPBH) lasers with multiquantum-well active layers emitting at 1.3 μm. These lasers have threshold currents in the range 40–50 mA at 30°C, external differential quantum efficiencies of ̃50% at 30°C and T0 values ̃160 to 180 K in the temperature range 10–60°C.
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Dutta et al. (1984) studied this question.
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