First investigation on an ultra-thin InAs/InP single quantum well by thermally detected optical absorption spectroscopy

A non-conventional technique of thermally detected adsorption (TD-OA) is used to study a strained InAs/InP quantum well with thickness between two and tree monolayers. The spectrometer and TD cell are briefly described and the TD-OA spectra are presented. Three signals due to the InAs well are identified. The simple envelope-function approach is sufficient for the interpretation of these, which are attributed to transitions involving the heavy-hole levels. However, for the light-hole-related peak, a more sophisticated theory, taking into account the coupling between the light hole and spin-orbit split-off states, is necessary to fit the result.