Sub-micrometre p+-gate surface-channel pMOSFETs have been successfully fabricated with 6–10nm-thick nitrided SiO2 gate films formed in an N2O ambient. The devices have excellent reliability in hot-carrier-induced degradation because of the good abilities of N2O-nitrided SiO2 films in both the blocking of boron penetration and the reduction in electron traps.
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Uchiyama et al. (1990) studied this question.
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