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October 15, 1974Applied Physics Letters

Threshold reduction in Pb1−xSnx Te laser diodes through the use of double heterojunction geometries

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Authors

LTL. R. TomasettaON Semiconductor (United States)CFClifton G. FonstadMassachusetts Institute of Technology

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Tomasetta et al. (1974) studied this question.

synapsesocial.com/papers/6a92e2da6c5b3ee1e98efdb9https://doi.org/10.1063/1.1655540
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Also Consider

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  1. 1Double heterostructure Pb1-xSnx Te–PbTe lasers with cw operation at 77 K1974 · 94 citations
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  3. 3Liquid phase epitaxial growth of laser heterostructures in Pb1−xSnxTe1974 · 64 citations
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