On the Time Behaviour of Electron Impact Excitation in Thin Film Electroluminescent Devices)

The time dependence of current, transferred charge, and brightness are measured in ac thin film electroluminescent devices of the MISIM (metal-insulator-semiconductor-insulator-metal) type. From these data generation rates γ(t) and excitation efficiencies η(t) as well as the voltage across the semiconductor layer are derived. The information obtained fits nicely into a simple picture of the basic mechanisms in such structures and may have more general implications for the understanding of basic processes.