The magnetic field splitting and strain splitting of the emission lines in the 1.5040–1.5110 eV range in GaAs are reported. In the Voigt configuration the lines show doublet splittings in applied magnetic fields. In combined magnetic and strain fields four lines are observed in this configuration. All of the lines show a similar splitting. The splittings agree with what would be expected for shallow donor-acceptor pair centers in a zinc-blende structure.
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Reynolds et al. (1986) studied this question.
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