Manipulating Transistor Operation via Nonuniformly Distributed Charges in a Polymer Insulating Electret Layer

The performance of a field-effect transistor (FET) relies directly on the correlation between source-drain current and gate voltage. The authors offer a design principle for manipulating FET operations, using nonuniform distributions of charge (electrets) between semiconductor and dielectric layers to mimic a multigate configuration. This approach simultaneously improves a transistor's field-effect mobility and on:off ratio, as well as tuning the threshold voltage, and shows that a high-performance FET could be made even from semiconductors with low intrinsic mobilities.