Rutherford back-scattering, Hall effect and Nomarski interference microscopy have been used to study 200 keV selenium ions implanted into InP in the dose range 1*10 14 to 1*10 15 cm -2 . Samples were irradiated with single pulses from a Q-switched ruby laser in the energy range 0.2 to 2.2 J cm -2 . It was found that capless laser irradiation does not allow complex recrystallisation of damaged InP, and an energy density of 0.3 J cm -2 causes surface decomposition, thus producing indium-rich surface layers. To ensure that the measured electrical properties were due to the implanted atoms alone it was found necessary to thermally anneal samples at 4000DC for 5 min after the laser irradiation. The activity was 26% and the mobility of 300 cm 2 V -1 s -1 for a dose of 1*10 15 Se + cm -2 irradiated at 0.5 J cm -2 .
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Gill et al. (1981) studied this question.
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