Ga 2 O 3 (Gd 2 O 3 )/GaAspower MOSFETs

The power performance of GaAs MOSFETs using Ga2O3(Gd2O3) as the gate dielectric is presented. The I-V characteristics of the power devices are virtually free of hysteresis, indicating low interface state density in the oxide/GaAs interface. When operated at 850 MHz cellular frequency and tuned for maximum output power, maximum power-added efficiencies of 45 and 56% were obtained under 3 and 5 V operation, respectively. An output power of 26.5 dBm was measured from a 1 µm × 2.4 mm device under 5 V operation. These results show that the developed GaAs MOSFETs are promising candidates for microwave power amplifiers.