A lateral p–n junction allows direct injection of electrons and holes in the active layer of devices such as laser diodes and can reduce carrier relaxation time and increase modulation bandwidth. Light-emitting diodes were made on patterned GaAs (311)A-oriented substrates by using a lateral p–n junction formed in GaAs–silicon-doped epilayers grown by molecular beam epitaxy. Good electroluminescence at room temperature was obtained for both GaAs single layers and GaAs/AlGaAs multiple quantum well structures.
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Vaccaro et al. (1998) studied this question.
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