We discuss the successes of the dynamical mean–field (DMF) approach to metal–insulator transitions in both the clean and the disordered limit. In the latter case, standard DMF equations are generalized in order to incorporate both the physics of strong correlation and Anderson localization effects. The results give new insights into the puzzling features of doped semiconductors.
No takes yet. Share an insight, caveat, or question.
A 1998 study studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: