The stress in Mo films evaporated by an electron-beam gun onto SiO2/Si substrates has been studied as a function of temperature of heat treatment after deposition. The structure of the films was observed by x-ray diffraction line breadth and scanning electron microscope. Both tensile stress σHT and columnar grain size 〈D〉 increased linearly with temperature in the range of 600°–1000°C (σHT=0.6/2.0×109 dyn/cm2, 〈D〉=120/1300 Å at 600°/1000°C) and σHT nearly stopped increasing above 1000°C. Such σHT and 〈D〉 behavior can be explained semiquantitatively by the Nakajima–Kinosita model wherein the internal stress can be built up by the volume contraction due to the increase in grain size. It was found that the electrical resistivity of the films was also dominated by the columnar grain boundary.
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Oikawa et al. (1977) studied this question.