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A new in situ technique for determination of solid phase epitaxial regrowth kinetics under high-pressure conditions is described. It is applied to the study of pressure effects on recrystallization kinetics of amorphous implanted GaAs. The results show that the epitaxial growth rate is enhanced with pressure. An empirical formalism is developed describing the effect of pressure as a softening of the acoustic modes and a consequent decrease of the activation energies. Good agreement is obtained with the experimental data.
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Licoppe et al. (1987) studied this question.
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