Radiation-induced defects in germanium were studied using deep-level transient spectroscopy and stress transient spectroscopy. Four electron traps have been identified: the planar four vacancy at Ec −0.09 eV, the divacancy at Ec −0.17 eV, the vacancy-oxygen pair at Ec −0.27 eV, and the donor-vacancy pair level at Ec −0.35 eV.
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Nagesh et al. (1988) studied this question.
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