Defect States in n-Type Germanium Irradiated with 1.5 MeV Electrons

The defect levels produced in antimony- or arsenic-doped germanium by irradiation with 1.5 MeV electrons and the annealing behaviour of these materials were studied by the DLTS technique. The position of the levels formed by radiation-induced defects was determined and the dependence of the level position on the species and concentration of the impurity atoms are reported. The defects associated with the E c –0.40 eV level and the E c –0.23 eV level are thought to be formed by the association of antimony atoms with unidentified defects. From the results of annealing under injection, the defects associated with the E c –0.23 eV level are considered to be annealed by a recombination-enhanced mechanism.