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The spectral dependence of the gain and noise characteristics of a gas source molecular beam epitaxy (GSMBE)-grown BH-GaInAsP near-travelling-wave semiconductor laser amplifier are presented, from which an indication of nonresonant internal losses is given. An intrinsic noise figure of 6 dB at an internal gain of 28 dB is obtained.
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Simon et al. (1989) studied this question.
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